Study on the Formation of SiOC Films and the Appropriate Annealing Temperature

217 Abstract—As silicon devices shrink and their density increases, the low dielectric constant materials instead of SiO 2 film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at 300~500 ℃ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant using by the structure of the metal/SiOC film/p-Si, chemical shift, thickness, refractive index and hardness. The trend of reflective index was inverse proportioned the thickness, but the dielectric constant was proportioned it. The dielectric constant decreased with decreasing the thickness and the increment of the refractive index.